STT13005D-K Datasheet PDF - STMicroelectronics

Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.

FEATUREs
■ Integrated antiparallel collector-emitter diode
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ Flyback and forward single transistor low power converters