STW23NM60ND Datasheet PDF - STMicroelectronics

Description
The device is an N-channel FDmeshâ„¢ II Power MOSFET that belongs to the second generation of MDmeshâ„¢ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with a n intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

FEATUREs
â–  The worldwide best RDS(on) * area amongst the
   fast recovery diode devices
â–  100% avalanche tested
â–  Low input capacitance and gate charge
â–  Low gate input resistance
â–  High dv/dt and avalanche capabilities

APPLICATION
   Switching applications