STW23NM60ND(2020) Datasheet PDF - STMicroelectronics

Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

FEATUREs
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness

APPLICATIONs
• Switching applications