STW48N60M2-4(2017) Datasheet PDF - STMicroelectronics

Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

FEATUREs
• Excellent switching performance thanks to
   the extra driving source pin
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• High efficiency switching applications:
   ― Servers
   ― PV inverters
   ― Telecom infrastructure
   ― Multi kW battery chargers