SW50N06 Datasheet PDF - Unspecified1

[SEMIPOWER Electronic Technology Co., Ltd]

General Description
This power MOSFET is produced in CHMC with advanced  VDMOS process, planar stripe. This
technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.

FEATUREs
N-Channel MOSFET
BVDSS(Minimum): 60V
RDS(ON)(Maximum): 0.023ohm
ID: 50 A
Qg(Typical): 30 nc
PD(@TC=25°C): 130W