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SW7N60H Datasheet PDF - Unspecified2

SW7N60H image

Part Name
SW7N60H

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5 Pages

File Size
506.9 kB

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[SAMWIN]

General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.


FEATUREs
■ High ruggedness
■ RDS(ON) (Max 1.32Ω)@VGS=10V
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested

 


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