T1G4005528-FS(2011) Datasheet PDF - TriQuint Semiconductor

General Description
The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features
• Frequency: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
• Output Power (P3dB): 55 W at 3.5 GHz
• Lead-free and RoHS compliant

APPLICATIONs
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Avionics
• Wideband or narrowband amplifiers