TC1101P0710 Datasheet PDF - Transcom, Inc.

DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
● Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
● High Associated Gain: Ga = 12 dB Typical at 12 GHz
● High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
● Breakdown Voltage: BVDGO ≥ 9 V
● Lg = 0.25 µm, Wg = 160 µm
● All-Gold Metallization for High Reliability
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested