TC1102P0811 Datasheet PDF - Transcom, Inc.

DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES
● Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
● High Associated Gain: Ga = 13 dB Typical at 12 GHz
● Lg = 0.25 µm, Wg = 160 µm
● All-Gold Metallization for High Reliability
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested