TC1401 Datasheet PDF - Transcom, Inc.

DESCRIPTION
The TC1401 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is with via-hole processes to reduce the thermal resistance and grounding inductance. The short gate length enables the device to be used in a circuit up to 20GHz. All devices are 100% DC tested to assure consistent quality. Backside gold plating is compatible with standard AuSn die-attach.

FEATURES
● 0.5W Typical Power at 12 GHz
● Linear Power Gain: GL = 9 dB Typical at 12 GHz
● High Linearity: IP3 = 37 dBm Typical at 12 GHz
● High Power Added Efficiency (PAE): 40% typical
● Via holes in the source pads
● Breakdown Voltage: BVDGO ≥ 15 V
● Lg = 0.35 µm, Wg = 1.2 mm
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested