TC1401N(V2) Datasheet PDF - Transcom, Inc.

DESCRIPTION
The TC1404N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed without via-holes for single-bias applications. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifiers

FEATURES
● 0.5W Typical Power at 12 GHz
● Linear Power Gain: GL = 11 dB Typical at 12 GHz
● High Linearity: IP3 = 37 dBm Typical at 12 GHz
● High Power Added Efficiency: Nominal PAE of 40 % at 12 GHz
● Non-Via Hole Source for Single-Bias Application
● Suitable for High Reliability Application
● Breakdown Voltage: BVDGO ≥ 13.5 V
● Lg = 0.25 µm, Wg = 1.2 mm
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested