TC1501 Datasheet PDF - Transcom, Inc.

DESCRIPTION
   The TC1501 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers.

FEATURES
● 1W Typical Power at 6 GHz
● Linear Power Gain: GL = 13 dB Typical at 6 GHz
● High Linearity: IP3 = 40 dBm Typical at 6 GHz
● High Power Added Efficiency: Nominal PAE of 43% at 6 GHz
● Via Hole Source Ground
● Suitable for High Reliability Application
● Breakdown Voltage: BVDGO ≥ 15 V
● Lg = 0.35 µm, Wg = 2.4 mm
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested