TC2571 Datasheet PDF - Transcom, Inc.

DESCRIPTION
The TC2571 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. TheCu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.

FEATURES
• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency: PAE ³ 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO ³ 15 V
• Lg = 0.35 mm, Wg = 2.4 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package