TGF2021-04 Datasheet PDF - TriQuint Semiconductor

Product Description
The TriQuint TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.
The TGF2021-04 typically provides > 36 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications.
The TGF2021-04 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.
The TGF2021-04 has a protective surface passivation layer providing environmental robustness.

KEY FEATUREs and Performance
• Frequency Range: DC - 12 GHz
• > 36 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 4mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 300-500mA
   (Under RF Drive, Id rises from 300mA to 960mA)
• Chip Dimensions: 0.57 x 1.30 x 0.10 mm
                                (0.022 x 0.051 x 0.004 in)

Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications