TGF2022-12 Datasheet PDF - TriQuint Semiconductor

Product Description
The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.
The TGF2022-12 typically provides > 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications.
The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.
The TGF2022-12 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant

KEY FEATUREs and Performance
• Frequency Range: DC - 20 GHz
• > 31 dBm Nominal Psat
• 58% Maximum PAE
• 39 dBm Nominal OIP3
• 13 dB Nominal Power Gain
• Suitable for high reliability applications
• 1.2mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 90-150mA
   (Under RF Drive, Id rises from 90mA to 300mA)
• Chip Dimensions: 0.57 x 0.79 x 0.10 mm
                               (0.022 x 0.031 x 0.004 in)

Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications