TGF2022-60 Datasheet PDF - TriQuint Semiconductor

Product Description
The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from DC-20 GHz. The TGF2022-60 is designed using TriQuint’s proven standard 0.35um power pHEMT production process.
The TGF2022-60 typically provides > 38 dBm of saturated output power with power gain of 12 dB. The The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications.
The TGF2022-60 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications.
The TGF2022-60 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant

KEY FEATUREs and Performance
• Frequency Range: DC - 20 GHz
• > 38 dBm Nominal Psat
• 57% Maximum PAE
• 12 dB Nominal Power Gain
• Suitable for high reliability applications
• 6.0mm x 0.35um Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 448-752mA
   (Under RF Drive, Id rises from 448mA to 1480mA)
• Chip Dimensions: 0.57 x 2.93 x 0.10 mm
                                (0.022 x 0.115 x 0.004 in)

Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications