Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
For Power-Amplifier and High-Speed-Switching Applications
FEATUREs:
■ 30 W at 25°C case temperature
■ 3 A rated collector current
■ Min. fT of 3 MHz at -10 V, -200 mA
■ Designed for complementary use with TIP29-series n-p-n types