Complementary Silicon High-Power Transistors
. . . for general–purpose power amplifier and switching applications.
• 10 A Collector Current
• Low Leakage Current —
ICEO = 0.7 mA @ 60 V
• Excellent dc Gain —
hFE = 40 Typ @ 3.0 A
• High Current Gain Bandwidth Product —
hfe = 3.0 min @ IC
= 0.5 A,
f = 1.0 MHz