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TN2010H-6FP Datasheet PDF - STMicroelectronics

TN2010H-6FP image

Part Name
TN2010H-6FP

Other PDF
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page
9 Pages

File Size
333.2 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
   Packaged in an insulated TO-220FPAB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C.
   This insulated fullpack package allows a back to back configuration.
   The combination of noise immunity and low gate triggering current allows to design strong and compact control circuits.


FEATUREs
• High junction temperature: Tj = 150 °C
• High noise immunity dV/dt = 400 V/µs up to
   150 °C
• Gate triggering current IGT = 10 mA
• Peak off-state voltage VDRM/VRRM = 600 V
• High turn-on current rise dI/dt = 100 A/µs
• ECOPACK®2 compliant component
• TO-220FPAB insulated package:
   - Complies with UL standards (File ref:
      E81734)
   - Insulated voltage: 2000 VRMS


APPLICATIONs
• Motorbike voltage regulator circuits
• Inrush current limiting circuits
• Motor control circuits and starters
• Light dimmers
• Solid state relays


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