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TN2010H-6T Datasheet PDF - STMicroelectronics

TN2010H-6T image

Part Name
TN2010H-6T

Other PDF
  no available.

PDF
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page
9 Pages

File Size
413.7 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
   Packaged in a non-isolated TO-220AB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C
   The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit.


FEATUREs
• High junction temperature: Tj = 150 °C
• High noise immunity dV/dt = 400 V/µs up to
   150 °C
• Gate triggering current IGT = 10 mA
• Peak off-state voltage VDRM/VRRM = 600 V
• High turn on current rise dI/dt = 100 A/µs
• ECOPACK®2 compliant component


APPLICATIONs
• Motorbike voltage regulator circuits
• Inrush current limiting circuits
• Motor control circuits and starters
• Light dimmers
• Solid state relays


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