Description:
Advance quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible.
Features:
• Very compact size – 8.75x9.55x1.32mm³
• High efficiency – typical GSM850 52%, E-GSM
58%, DCS 52%, PCS 50%.
• Positive supply voltage 3.1 to 5.2 V.
• 50 Ω input and output impedances.
• GPRS class 12 compatible.
• CMOS band select and power control inputs.
• High-reliability InGaP technology.
• Ruggedness 10:1.
• Few external components.
• Very low input power levels
GSM850/900 -3dBm [min]
DCS/PCS -5dBm [min]