Description:
Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. It includes internal closed-loop power control. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands.
Features:
• Very compact size – 10×7×1.4 mm3.
• High efficiency – typical GSM850 47%,
GSM900 56%, DCS 51%, PCS 50%.
• Positive supply voltage – 2.9 to 4.5 V.
• 50 Ω input and output impedances.
• GPRS class 12 compatible.
• CMOS band select and internal closed-loop
power control.
• High-reliability InGaP technology.
• Ruggedness 10:1.
• Few external components.