Description:
Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. Band select and power control inputs on the module are CMOS compatible.
Features:
• Very compact size – 7x7x1.3mm³
• High efficiency – typical GSM850 53%,
GSM900 58%, DCS 50%, PCS 50%.
• Positive supply voltage – 3.0 to 4.5 V.
• No reference voltage needed
• 50 Ω input and output impedances.
• GPRS class 12 compatible.
• CMOS band select and power control
inputs.
• High-reliability InGaP technology.
• Ruggedness 10:1.