VDS = 50V
RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω
RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω
FEATUREs
✧ Advanced trench process technology
✧ High density cell design for ultra low on-resistance
✧ High input impedance
✧ High speed switching
✧ No minority carrier storage time
✧ CMOS logic compatible input
✧ No secondary breakdown
✧ Compact and low profile SOT-363 package