UESD6V8L1F Datasheet PDF - Union Semiconductor, Inc.

General Description
The UESD6V8L1F ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs.
The UESD6V8L1F ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UESD6V8L1F is available in a DFN2/FBP2 1.0×0.6 (Compatible with SOD882) package with working voltages of 5 volt.

FEATUREs
   Transient protection for data lines to
      IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
   Small package for use in portable electronics
   Suitable replacement for MLV’s in ESD protection
   applications
   Protect one I/O or power line; Low clamping voltage
   Stand off voltages: 5V; Low leakage current
   Solid-state silicon-avalanche technology
   Small Body Outline Dimensions: 1.0mm×0.6mm

APPLICATIONs
   Cell Phone Handsets and Accessories
   Personal Digital Assistants (PDA’s)
   Notebooks, Desktops, and Servers
   Portable Instrumentation
   Cordless Phones
   Digital Cameras
   Peripherals
   MP3 Players