VN0204N6 Datasheet PDF - Supertex Inc

Advanced DMOS Technology

   These enhancement-mode (normally-off) power transistors util-ize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
□ Freedom from secondary breakdown
□ Low power drive requirement
□ Ease of paralleling
□ Low Ciss and fast switching speeds
□ Excellent thermal stability
□ Integral Source-Drain diode
□ High input impedance and high gain
□ Complementary N- and P-Channel devices

APPLICATIONs
□ Motor control
□ Converters
□ Amplifiers
□ Switches
□ Power supply circuits
□ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)