VN0206N6(V2) Datasheet PDF - Supertex Inc

Advanced DMOS Technology

   These enhancement-mode (normally-off) power transistors util-ize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
□ 4 independent channels
□ 4 electrically isolated die
□ Commercial and Military versions available
□ Freedom from secondary breakdown
□ Low power drive requirement
□ Low Ciss and fast switching speeds
□ High input impedance and high gain

APPLICATIONs
□ Motor control
□ Converters
□ Amplifiers
□ Switches
□ Power supply circuits
□ Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)