WFF2N65B Datasheet PDF - Shenzhen Winsemi Microelectronics Co., Ltd

GeneralDescription
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on-state resistance,have ahigh rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.

FEATUREs
2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9.0nC)
Fast Switching Capability
100% Avalanche Tested
Isolation Voltage( VISO=4000VAC )
Maximum Junction Temperature Range (150℃)