Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
FEATUREs
• Dual N-Channel MOSFET
• Low On-Resistance:
◾ 3.0Ω @ 4.5V
◾ 4.0Ω @ 2.5V
◾ 6.0Ω @ 1.8V
◾ 10Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• ESD Protected Gate (HBM 300V)
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
APPLICATIONs
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SOT963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)