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2SC3669
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Description
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Unisonic Technologies
2SC3669
NPN EPITAXIAL SILICON TRANSISTOR
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Toshiba
2SC3669
_
1997
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
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Unisonic Technologies
2SC3669
_
RevB
NPN EPITAXIAL SILICON TRANSISTOR
View
Unisonic Technologies
2SC3669
_
RevA
NPN EPITAXIAL SILICON TRANSISTOR
View
Toshiba
2SC3669
_
V2
MINI PACKAGE SERIES
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Toshiba
2SC3669
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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Unisonic Technologies
2SC3669
L-X-TN3-R
NPN EPITAXIAL SILICON TRANSISTOR
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Unisonic Technologies
2SC3669
G-X-AB3-R
NPN EPITAXIAL SILICON TRANSISTOR
View
Unisonic Technologies
2SC3669
L-X-TM3-T
NPN EPITAXIAL SILICON TRANSISTOR
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Unisonic Technologies
2SC3669
G-X-AA3-R
NPN EPITAXIAL SILICON TRANSISTOR
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