NT1GD64S8HB0FM Datasheet
MFG CO.
Part NO.
Description
PDF
Nanya Technology
1GB, 512MB and 256MB 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device
Nanya Technology
1GB, 512MB and 256MB 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device
Match & Start : NT1GD64S8HB0FM
Nanya Technology
16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
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16Mx64 bit Two Bank Small Outline SDRAM Module based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
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16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
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16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Nanya Technology
16Mx64 bit Two Bank Small Outline SDRAM Module based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
Nanya Technology
200pin One Bank Unbuffered DDR SO-DIMM Based on DDR266/200 16Mx8 SDRAM
Nanya Technology
16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Nanya Technology
16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD