
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Renesas Electronics
1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA

California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

California Eastern Laboratories.
NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (20 mW MIN)

California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

California Eastern Laboratories.
NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS

California Eastern Laboratories.
NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS

California Eastern Laboratories.
NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (20 mW MIN)

California Eastern Laboratories.
NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN)