
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NEC => Renesas Technology
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATIO

California Eastern Laboratories.
NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS

NEC => Renesas Technology
1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Renesas Electronics
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA