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V2011TC-10 Datasheet

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Part NO.
Description
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BSI
Brilliance Semiconductor
BS616UV2011TC-10
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
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BSI
Brilliance Semiconductor
BS616LV2011TC-10
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
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Match & Start : V2011TC-10
VISHAYSEMICONDUCTOR
Vishay Semiconductors
V20150S
High-Voltage Trench MOS Barrier Schottky Rectifier
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Panasonic
Panasonic Corporation
V20112U
“ZNR” Transient/Surge Absorbers (Type D)
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Vishay
Vishay Semiconductors
V20150C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Vishay
Vishay Semiconductors
V20120C_2013
Dual High Voltage Trench MOS Barrier Schottky Rectifier
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Vishay
Vishay Semiconductors
V20150S
High Voltage Trench MOS Barrier Schottky Rectifier
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Panasonic
Panasonic Corporation
V20102U
“ZNR” Transient/Surge Absorbers (Type D)
View
Panasonic
Panasonic Corporation
V20121U
“ZNR” Transient/Surge Absorbers (Type D)
View
Panasonic
Panasonic Corporation
V20151U
“ZNR” Transient/Surge Absorbers (Type D)
View
Vishay
Vishay Semiconductors
V20120C_2011
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
View
Vishay
Vishay Semiconductors
V20150S_2011
High-Voltage Trench MOS Barrier Schottky Rectifier
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