03N06C View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
MFG CO.
03N06C
Harris Semiconductor
'03N06C' PDF : 13 Pages View PDF
Specifications RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Limiting Current
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
VGS(TH)
IDSS
IGSS
rDS(ON)
IDS(LIMIT)
VGS = VDS, ID = 250µA
VDS = 45V,
VGS = 0V
TJ = +25oC
TJ = +150oC
VGS = 5V
TJ = +25oC
TJ = +150oC
ID = 0.100A,
VGS = 5V
TJ = +25oC
TJ = +150oC
VDS = 15V,
VGS = 5V
TJ = +25oC
TJ = +150oC
tON
tD(ON)
VDD = 30V, ID = 0.10A,
RL = 300Ω, VGS = 5V,
RGS = 25Ω
tR
tD(OFF)
tF
tOFF
CISS
COSS
VDS = 25V, VGS = 0V,
f = 1MHz
CRSS
RθJC
RθJA
TO-220 Package
TO-251 and TO-252 Packages
MIN
TYP MAX UNITS
60
-
85
V
1
-
2.5
V
-
-
50
µA
-
-
200
µA
-
-
5
µA
-
-
20
µA
-
-
6.0
Ω
-
-
12.0
Ω
280
-
420
mA
140
-
210
mA
-
-
7.5
µs
-
-
2.5
µs
-
-
5.0
µs
-
-
7.5
µs
-
-
5.0
µs
-
-
12.5
µs
-
100
-
pF
-
65
-
pF
-
3.0
-
pF
-
-
5.0
oC/W
-
-
80
oC/W
-
-
100
oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 0.1A
tRR
ISD = 0.1A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
1.0
ms
2
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