155N3LH6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
155N3LH6
STMicroelectronics
'155N3LH6' PDF : 18 Pages View PDF
STB155N3LH6
STD155N3LH6
N-channel 30 V, 2.4 mā¦ , 80 A, DĀ²PAK, DPAK
STripFETā¢VI DeepGATEā¢ Power MOSFET
Features
Order codes
STB155N3LH6
STD155N3LH6
VDSS
30 V
RDS(on)
max
3.0 mā¦
1. Current limited by package
ā 100% avalanche tested
ā Logic level drive
ID(1) PTOT
80 A 110 W
Applications
ā Switching applications
ā Automotive
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFETā¢
DeepGATEā¢ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
TAB
3
1
DĀ²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary
Order codes
STB155N3LH6
STD155N3LH6
Marking
155N3LH6
3
!-V
Package
D2PAK
DPAK
Packaging
Tape and reel
September 2011
Doc ID 17893 Rev 3
1/18
www.st.com
18
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