26NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

26NM60ND

N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages

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Electrical characteristics

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 21 A, VGS = 0

-

21 A

84 A

1.6 V

trr

Reverse recovery time

ISD = 21 A, VDD = 60 V

-

170

ns

Qrr Reverse recovery charge

di/dt=100 A/µs

- 1.39

µC

IRRM Reverse recovery current

(see Figure 20)

-

14

A

trr

Reverse recovery time

ISD = 21 A,VDD = 60 V

- 230

ns

Qrr Reverse recovery charge

di/dt=100 A/µs,

TJ = 150 °C

- 2.24

µC

IRRM Reverse recovery current

(see Figure 20)

-

18

A

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

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