2ED21091S06F
650 V half bridge gate driver with integrated bootstrap diode
11
Revision history
Document
version
2.00
2.10
2.20
2.21
2.22
Date of release Description of changes
Aug 12, 2019
Sep. 12, 2019
Dec. 3, 2019
April 07, 2020
July 02, 2020
Final Datasheet
Revised parameter values in Table 6, 7 to match the test conditions.
Added deadtime settings section in page 10-11.
Changed the ESD HBM from Class 2 to Class 1C
IC latch-up test per JESD78
Datasheet
www.infineon.com/soi
25 of 26
V 2.22
2020-07-02