2N3906 View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part Name

Description

MFG CO.

2N3906

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

1 2

Plastic-Encapsulate Transistors

FEATURE

z PNP silicon epitaxial planar transistor for switching and

Amplifier applications

z As complementary type, the NPN transistor 2N3904 is

Recommended

z This transistor is also available in the SOT-23 case with

the type designation MMBT3906

2N3906 (PNP)

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value Unit

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.2

A

PC

Collector Power Dissipation

0.625

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

1. EMITTER

2. BASE

3. COLLECTO

TO-92

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC = -10μA, IE=0

-40

Collector-emitter breakdown voltage

V(BR)CEO IC =-1mA , IB=0

-40

Emitter-base breakdown voltage

V(BR)EBO IE= -10μA, IC=0

-5

Collector cut-off current

ICBO

VCB= -40 V,IE=0

Collector cut-off current

ICEX

VCE= -30 V,VBE(off)=-3V

Emitter cut-off current

IEBO

VEB= -5 V , IC=0

hFE1

VCE=-1 V, IC= -10mA

100

DC current gain

hFE2

VCE=-1 V, IC= -50mA

60

hFE3

VCE=-1 V, IC= -100mA

30

Collector-emitter saturation voltage

VCE(sat) IC= -50mA, IB= -5mA

Base-emitter saturation voltage

VBE(sat) IC= -50mA, IB= -5mA

Transition frequency

VCE=-20V, IC= -10mA

fT

250

f = 100MHz

Delay Time

Rise Time

td

VCC=-3V,VBE=-0.5V,

tr

IC=-10mA,IB1=-1mA

Storage Time

Fall Time

ts

VCC=-3V,Ic=-10mA

tf

IB1=IB2=-1mA

CLASSIFICATION OF hFE1

Rank

Range

O

100-200

Y

200-300

Typ

Max Unit

V

V

V

-0.1 μA

-50 nA

-0.1 μA

400

-0.4

-0.95

35

35

225

75

V

V

MHz

ns

ns

ns

ns

G

300-400

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

Page:P2-P1

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