2N5551 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'2N5551' PDF : 3 Pages View PDF
isc Silicon NPN Power Transistor
DESCRIPTION
·NPN high-voltage transistor
·Low current (max. 300 mA)
·High voltage (max. 160 V)
·Complements to 2N5401.
APPLICATIONS
·Designed for Switching and amplification
in high voltage applications , such as telephony
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ Ta<50℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
INCHANGE Semiconductor
2N5551
VALUE
UNIT
180
V
160
V
6
V
0.3
A
0.6
A
0.1
A
0.63
W
150
℃
-65~150
℃
isc website：www.iscsemi.cn
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