2N5551 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'2N5551' PDF : 8 Pages View PDF
Philips Semiconductors
NPN high-voltage transistors
Product specification
2N5550; 2N5551
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
handbook, halfpage1
2
3
1
2
3
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
2N5550
2N5551
collector-emitter voltage
2N5550
2N5551
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
MAX.
UNIT
−
160
V
−
180
V
−
140
V
−
160
V
−
6
V
−
300
mA
−
600
mA
−
100
mA
−
630
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 23
2
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