2N5551 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'2N5551' PDF : 8 Pages View PDF
Philips Semiconductors
NPN high-voltage transistors
Product specification
2N5550; 2N5551
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
2N5550
collector cut-off current
2N5551
emitter cut-off current
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
collector-emitter saturation voltage
collector-emitter saturation voltage
2N5550
2N5551
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
2N5550
2N5551
IE = 0; VCB = 100 V
−
IE = 0; VCB = 100 V; Tamb = 100 °C −
IE = 0; VCB = 120 V
−
IE = 0; VCB = 120 V; Tamb = 100 °C −
IC = 0; VEB = 4 V
−
IC = 1 mA; VCE = 5 V; see Fig.2
60
80
IC = 10 mA; VCE = 5 V; see Fig.2
60
80
IC = 50 mA; VCE = 5 V; see Fig.2
20
30
IC = 10 mA; IB = 1 mA
−
IC = 50 mA; IB = 5 mA
−
−
IC = 10 mA; IB = 1 mA
−
IC = 50 mA; IB = 5 mA
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
IC = 10 mA; VCE = 10 V; f = 100 MHz 100
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
−
MAX. UNIT
100
nA
100
µA
50
nA
50
µA
50
nA
−
−
250
250
−
−
150
mV
250
mV
200
mV
1
V
1
V
6
pF
30
pF
300
MHz
10
dB
8
dB
1999 Apr 23
3
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