2N5867 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2N5867' PDF : 2 Pages View PDF
1
2
<2>E.mL-L~on.aiLctoi £/-" 10 auati, Line.
U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5867
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sa.)= -1.0V(Max.)@ lc= -5A
• DC Current Gain-
: hFE=20-100@lc=-1.5A
APPLICATIONS
• Designed for medium-speed switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-5
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation@Tc=25°C 87.5
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
'C
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 •c/w
3
1
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
1t
C
'
'
t-E
1
t:
-*IU- D i PL
t XJrts^X / \ C
^ T f B ^ i_>
t V—-/
,B
k
1
nttn
DIM MM MAX
A
3900
e 2530 2667
C
7.80 8.30
D 0.90 1.10
E 1.40 1.60
G
1092
H
546
JL. 11-*° 13.50
L 16.75 1705
N 19.40 1962
Q
400 420
t 30.00 3020
V
430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Serni-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Scmi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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