2N6299 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'2N6299' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon PNP Darlington Power Transistor
2N6299
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
-3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A; IB= -80mA
-4.0
V
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -3V
-2.8
V
ICEX
Collector Cutoff Current
VCE= -80V; VEB(off)= -1.5V
VCE= -80V; VEB(off)= -1.5V; TC= 150℃
-0.5
mA
-5.0
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
-0.5 mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0 mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -3V
750 18K
hFE-2
DC Current Gain
IC= -8A ; VCE= -3V
100
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 0.1MHz
300
pF
SPTECH website：www.superic-tech.com
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