2N7002K View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
MFG CO.
'2N7002K' PDF : 5 Pages View PDF
2N7002K
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V(BR)DSS
60 V
RDS(on)MAX
5Ω@10V
5.3 Ω@4.5V
ID
340mA
SOT- 23
D
Features
● High density cell design for Low RDS（on）
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
● ESD protected
S
G
Applications
● Load Switch for Portable Devices
● DC/DC Converter
Marking:
● 72K
Symbol
VDS
VGS
ID
PD
TJ
Tstg
RθJA
Parameter
Drain-Source voltage
Gate-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance fromJunction to Ambient
Value
60
±20
340
0.35
150
-55~+150
357
Unit
V
V
mA
W
℃
℃
℃ /W
High Diode Semiconductor
1
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