2N7002K View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
MFG CO.
'2N7002K' PDF : 5 Pages View PDF
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage*
Zero Gate Voltage Drain Current
Gate –Source leakage current
Drain-Source On-Resistance*
Diode Forward Voltage
Symbol
Test Condition
VDS
VGS(th)
IDSS
IGSS1
IGSS2
IGSS3
RDS(on)
VSD
VGS = 0V, ID =250µA
VDS =VGS, ID =1mA
VDS =48V,VGS = 0V
VGS =±20V, VDS = 0V
VGS =±10V, VDS = 0V
VGS =±5V, VDS = 0V
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
td(on)
td(off)
trr
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO Igs=±1mA (Open Drain)
Notes :
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
Min Typ Max Units
60
V
1
1.3 2.5
V
1
µA
±10 µA
±200 nA
±100 nA
1.1
5.3
Ω
0.9
5
Ω
1.5
V
30
nC
40
pF
30
pF
10
pF
10
ns
15
ns
30
ns
±21.5
±30
V
High Diode Semiconductor
2
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