2SC3223 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

2SC3223

Silicon NPN Power Transistor

New Jersey Semiconductor 

1 2

j£ti£U ^EmL-Concmctot ^Product*, One.

\s

J

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

2SC3223

DESCRIPTION

• Low Collector Saturation Voltage-

: VCE(sat)=1.0V(Max.)@lc=10A

• High'Switching Speed

APPLICATIONS

• Designed for power supply and general purpose power

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

230

UNIT

V

^

1

lx^

k

'

PIN .BASE

2. EMITTER

3.COLLECT OR (CASE)

TO-3 package

VCEO

VEBO

Ic

ICM

IB

IBM

PC

Tj

Tstg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

Collector Power Dissipation

@ TC=25'C

Junction Temperature

Storage Temperature Range

230

V

7

V

20

A

40

A

7

A

14

A

200

W

150

•c

-55-150

°c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 0.62 °c/w

r«

A

1

T

'1

1

C

rE

1 t -*JU_D!F>1 L_K

V-

xJrX /

£> „;!

HS. ,/^

t ^^^ Sw.

VJ>

A]

^/

X

it

GB

1

t1 t

11)111

CUM MIH MAX

A

3900

B 25.30 26,67

C

7.80 S.30

C

0.30 1 10

E

t .40 1 ,60

G

1092

H

646

K 1140 13,50

L 1675 17,05

H 19.40 19.62

_&

4. TO 420

l> 30QQ » 20

V

4 30 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by N.I Semi-Conductors is believed to be holh accurate and reliable at the lime of uointi

lo pros-;. I lo\\e\cr, N.I Semi-Conductors assumes no responsibility for an> errors or omis.Mons discovered in ils ii>o.

N.I St-mi-C'i'iuluciors encourages customers to verify that datasheets MIX- current before placing orders.

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