2SC5271 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC5271' PDF : 2 Pages View PDF
1
2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5271
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 200V(Min)
• Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (lc= 2.5A, IB= 0.5A)
a
1 2. Z
__r
3
PIN 1.BASE
1. COLLECTOR
3. EMITTER
TO-220F package
APPLICATIONS
• Designed for resonant switching regulator and general
purpose applications.
B-
- C-
;
IQ ;-S- ;• - • .
-'
u
"
!
•;'•'
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VALUE UNIT
300
V
.1
4f -
•
i
'
i
L
'
'
H, - R-
K
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
I CM
Collector Current-Pulse
IB
Base Current-Continuous
PT
Tj
Junction Temperature
Tstg
Storage Temperature
200
V
7.0
V
5.0
A
10
A
2.0
A
30
W
150
'C
-55-150 "C
- •o
- N-
t
j ..
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
Q 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
\\N
N.I Semi-Conduetors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Semi-Conductors is helieved to he hoth accurate and reliable at the time ofgoiim
lo press. I lu\\e\er. N.I Scmi-Coiidiictors assumes no responsibility lor any emirs or omission.', discovered in its use.^
N.I SeiMi-C'onductors enuuira»cs customers to verily that datasheets are current before plneinu orders.
Quality Semi-Conductors
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