2SC5993 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'2SC5993' PDF : 2 Pages View PDF
1
2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5993
DESCRIPTION
• Good Linearity of HFE
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= l80V(Min)
• Complement to Type 2SA2140
APPLICATIONS
• Power amplification
• ForTVVM circuit
»
12 ?
2
i_r
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220F package
B-
- C-
•S-
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
'
o '•'''•
'•
'
U
F
SYMBOL
PARAMETER
VALUE UNIT
1
\
A
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25°C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
180
V
180
V
6
V
1.5
A
3.0
A
2.0
W
20
150
°C
-55-150 °c
I
L '•
H'
'
,
• R-
K
- -o
j ..
- N-
mm
DIM WIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
H 3.70 3.90
J 0.50 0.70
K 13.4 13.6
1.10 1.JO
N 5.00 5.20
Q 2.70 2.90
R 2 20 2 40
S 2.65 2.85
J 6.40 6.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, lllfbnnation furnished hy NJ Semi-Conductors is believed to ho both accurate and reliable at the time oh'oint
to press. I louever. N.I Semi-Condiietors assumes no rcsponsibilih for any errors or omissions discovered in its UNO. '
N.I Seini-Condiiclors ciicoura.ues customers to \erily thai datasheets are ciinvnl bel'orc plncin.u orders.
Quality Semi-Conductors
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