3DD301C View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

3DD301C

Silicon NPN Power Transistor

Inchange Semiconductor 

1 2

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

3DD301C

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max) @IC= 3A

APPLICATIONS

·Designed for B/W TV vertical output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

5

A

30

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.5 ℃/W

isc Website：www.iscsemi.cn

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